WebSep 9, 2024 · In this work, the large-area two-dimensional non-layered β-In2S3 continuous thin films were grown on mica substrate by physical vapor deposition (PVD) at temperature of 980 °C using In2S3 powders as precursor. The 2D β-In2S3 thin films were transferred from mica substrate to SiO2/Si substrate. The back-gate field effect transistors (FETs) … WebIn₂S₃ is Corundum structured and crystallizes in the trigonal R̅3c space group. In³⁺ is bonded to six equivalent S²⁻ atoms to form a mixture of distorted face, edge, and corner-sharing …
Numerical analysis of Al/Gr/ETL/MoS2/Sb2S3/Ni solar cell using …
WebApr 26, 2016 · In 2 S 3 is a widegap semiconductor with high photoconductive and photoluminescent properties, which makes it a promising material for optoelectronic applications (Shazly et al., 1998 ). WebApr 13, 2010 · In2S3 atomic layer deposition (ALD) with indium acetylacetonate (In (acac)3) and H2S was studied with quartz crystal microbalance (QCM), X-ray reflectivity (XRR), and Fourier transform infrared (FTIR) spectroscopy techniques. Subsequent In2S3 ALD on TiO2 nanotube arrays defined a model semiconductor sensitized solar cell. imx peach 097
Indium sulfide (In2S3) In2S3 - PubChem
WebJan 8, 2024 · Abstract. Indium sulfide (In 2 S 3) nanostructure is synthesized using chemical bath deposition (CBD) method, and doped by transition metals like Ag and Cu. The transition metal-doping effect on physical properties are analyzed and characterized by x-ray diffraction (XRD), Atomic Force Microscopy (AFM), UV-vis spectroscopy and … Web(1) 制备In2S3:将2-4 mmol In(NO3)3·5H2O和11-13 mmol硫脲溶于60-80 mL蒸馏水中,搅拌20-40 min,直到混合物均匀,将得到的混合物转移到两个50 mL聚四氟乙烯内衬不锈钢反应釜,在160-170 ℃下保持20-24 h,将反应釜自然冷却至室温后,过滤收集粉红色沉淀,用蒸馏水和乙醇洗涤 ... WebCdIn2S4/In2S3 bulk heterojunction nanosheet arrays are designed as photoanodes of photoelectrochemical cells, which have high transparency and high separation efficiency … in2flow